RA08H1317M

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317M 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V) Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW ηT>40% @ Pout=8W (V GG control), VDD=12.5V, Pin=20mW Broadband Frequency Range: 135-175MHz Low-Power Control Current IGG=1mA (typ) at VGG=3.5V Module Size: 30 x 10 x 5.4 mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4...