RB081L-20

Data Sheet Shottky barrier diode RB081L-20 Applications General rectification Dimensions (Unit : mm) Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. Construction Silicon epitaxial planar 2.6±0.2 39 ①② 1.5±0.2 0.1±0.02 　　　 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 ① ② Manufacuture Date 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2 Land size figure (Unit : mm) 2.0 PMDS Structure Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55 ±0.05 0.3 5.3±0.1 　 0.05 9 .5±0.1 5.5 ±0.05 1.75±0.1 1 2±0.2 2.9±0.1 4.0±0 .1 φ1.55 2 .8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature VRM VR Io IFSM Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 25 20 5 70 125 40 to 125 Unit V V A A °C °C El...