RB160L-60

Schottky barrier diode RB160L-60 Applications General rectification Dimensions (Unit : mm) Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability Construction Silicon epitaxial planar 2.6±0.2 44 ①② 1.5±0.2 0.1±0.02 　　　 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture D ate 4.5 ±0.2 1 .2±0.3 5.0±0.3 2.0 4.2 Datasheet Land size figure (Unit : mm) 2.0 PMDS Structure Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 1 .7 5 ± 0 .1 1 2 ± 0 .2 5.3±0.1 　 0.05 9 .5 ± 0 .1 5.5±0.05 2.9±0.1 4.0±0.1 φ1.55 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg (*1) Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltag...