RB160M-40

Schottky barrier diode RB160M-40 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Data Sheet Land size figure (Unit : mm) 1.2 2.6±0.1r 3. 35.±50.±10.22 0.85 3.05 Features 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability Construction Silicon epitaxial ① 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 PMDU Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.75±0.1nsded fo 8.0±0.2 33..7711±±00..108 3.5±0.05NotNeRewcDoemsimgen 1.81±0.1 4.0±0.1 φ1.0±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak （60Hz・1cyc） Junction temperature IFSM Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 40 40 1 30 150 40 to 150 Unit V V A A C C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - 0.46 0.51 IR - 4.0 30 Unit Conditions V IF=1.0A μA VR=40V www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/3 2015.09 - Rev.F PEAKcDoSURGEemsimgen FORWARD CURRENT:IFSM(A) RB160M-40 Data Sheet FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) for FORWARDns VOLTAGE:VF(mV)ded 1000 Ta=75℃ Ta=125℃ 100 Ta=150℃ 10 Ta=25℃ Ta=-25℃ 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10000 100...