RB161L-40
Diodes
Schottky barrier diode
RB161L-40
zApplications High frequency rectification For switching power supply...
RB161L-40
Diodes
Schottky barrier diode
RB161L-40
zApplications High frequency rectification For switching power supply zExternal dimensions (Units : mm)
1.5±0.2
zFeatures 1) Compact power mold type. (PMDS) 2) Ultra low VF.( VF=0.35V Typ. at 1A) 3) VRM=40V guaranteed.
CATHODE MARK
4.5±0.2
1.2±0.3
3
3
0.1 +0.02 −0.1
2.0±0.2 2.6±0.2
zConstruction Silicon epitaxial planar
ROHM : PMDS EIAJ : − JEDEC : SOD-106
Date of manufacture EX. 1999.12 → 9, C
zAbsolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current Junction temperature Storage temperature
∗ When mounting on PCB
Symbol VRM VR IO IFSM Tj Tstg
Limits 40 20 1 70 125 −40∼+125
Unit V V A A
˚C ˚C
zElectrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.40 1 Unit V mA IF=1.0A VR=20V Conditions
5.0±0.3
RB161L-40
Diodes
zElectrical characteristic curves (Ta=25°C)
10
100m
TERMINAL CAPACITANCE : CT (F)
1n
Ta=125˚C
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
1
10m 75˚C 1m
Ta= 12 5˚ C 75 ˚C 25 ˚C
100m
100p
10m
−25
˚C
100µ
25˚C
10µ
−25˚C
1m
0
0.1
0.2
0.3
0.4
0.5
1µ 0
10
20
30
40
50
10p 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between terminals characteristics
AVERAGE RECTIFIED FORWARD CURRENT : IO (A...
