RB411D

Data Sheet Schottky Barrier Diode RB411D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0. 3～0.6 1.0MIN. 2.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planer 2.9±0.2 リードとも 0.4　＋－00..105 Each lead has same dimension (3) ＋0.1 0 .15 －0.06 0.95 2 1 1.6－＋00.. 2.8±0. 2 (2) 0.95 0.95 1.9±0.2 0.8MIN. 0～ 0.1 SMD3 (1) 0 .8±0 .1 1. 1±0. 2 0. 01  Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1 .5±0.1 　　　　　 0 0 .3±0.1 1.75±0.1 3.2±0.1 5.5±0.2 3.5±0.05 8.0±0.2 3.2±0.1 0～0.5 3.2 ±0.1 4 .0±0.1 φ1.05MIN 1.35±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 20 500 3 125 40 to 125 Unit V V mA A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF1 - - 0.50 VF2 - - 0.30 IR1 - - 30 Ct1 - 20 - Unit Conditions V IF=500mA V IF=10mA μA VR=10V pF VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B RB411D Data Sheet FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) 1000 100 Ta=25℃ Ta=75℃ Ta=125℃ 10 Ta=-25℃ 1 0.1...