RB421D

Data Sheet Schottky Barrier Diode RB421D Applications Low power rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0.3～0.6 1.0MIN. 2.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planer 2.9±0.2 リードとも 0.4　＋－00..105 Eachlead has same dimension (3) ＋0.1 0 .15 －0.06 0.95 2.8±0.2 1. 6－＋00..12 (2) 0.95 0.95 1.9±0.2 (1) 0～ 0.1 0 .8±0 .1 1. 1±0. 2 0. 01 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 4 .0± 0.1 2 .0±0 .05 φ1.5 ±0.1 　　　　　 0 0.8MIN. SMD3 Structure 0.3±0.1 1.75±0.1 3.2±0.1 5.5±0.2 3.5±0.05 8.0±0.2 3.2±0.1 0～0.5 3.2±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg 4 .0±0 .1 φ 1.0 5MI N Limits 40 40 100 1 125 40 to 125 Unit V V mA A °C °C 1.35±0.1 Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF1 - - 0.55 VF2 - - 0.34 IR1 - - 30 Ct1 - 6 - Unit Conditions V IF=100mA V IF=10mA μA VR=10V pF VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A RB421D Data Sheet FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) 100 Ta=125℃ 10 Ta=75℃ 1 0.1 Ta=25℃ Ta=-25℃ 0.01 0 100...