Data Sheet
Schottky Barrier Diode
RB461F
Applications Low power rectification
Dimensions (Unit : mm)
Land size f...
Data Sheet
Schottky Barrier Diode
RB461F
Applications Low power rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm) 1.3
1 .25 ±0. 1 2.1±0.1
0.1Min
0.9MIN. 1.6
Features 1)Small mold type. (UMD3) 2)Low VF. 3)High reliability
Construction Silicon epitaxial planer
2.0±0.2
0.3±0.1
Eリaーchドleとadもhas same dimension
0.15±0.05
(3)
(2)
(0.65) (0.65) 1.3±0.1
(1)
0~0.1
0.7±0.1 0.9±0.1
ROHM : UMD3
JEDEC : SOT-323 JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.65
0.8MIN UMD3 Structure
0.3±0.1
1.75±0.1
8.0±0.2
3.5±0.05
2.4±0.1
2.4±0.1
5.5±0.2
0~0.1
2.25±0.1 0
4.0±0.1
φ0.5±0.05
1.25±0.1
Absolute maximum ratings (Ta=25°C) Parameter
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 25 20 0.7 3 125
40 to 125
Unit V V A A °C °C
Electrical characteristics (Ta=25°C) Parameter
Forward voltage Reverse current
Symbol Min. Typ. Max. VF - - 0.49 IR - - 200
Unit Conditions
V IF=700mA μA VR=20V
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1/3
2011.04 - Rev.C
RB461F
Data Sheet
FORWARD CURRENT:IF(A)
FORWARD VOLTAGE:VF(mV)
1 Ta=125℃
Ta=75℃ 0.1
0.01
Ta=-25℃ Ta=25℃
0.001 0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
REVERSE CURRENT:IR(uA)
100000 10000 1000 100 10 1 0.1 0
Ta=125℃ Ta=7...