RB500V-40

Diodes Shottky barrier diode RB500V-40 zApplication Low current rectification zFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. zExternal dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　 0.05 zConstruction Silicon epitaxial planar 0.3±0.05 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) 0.7±0.2 　 0.1 zTaping dimensions (Unit : mm) 1.7±0.1 2.5±0.2 0.8MIN. 2.1 RB500V-40 zLead size figure (Unit : mm) 0.9MIN. UMD2 zStructure zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Forward voltage VF - Reverse current IR - Capacitance between terminals Ct - Limits Unit 45 V 40 V 100 mA 1 A 125 ℃ -40 to +125 ℃ Typ. Max. - 0.45 - 1 6.0 - Unit Conditions V IF=10mA µA VR=10V pF VR=10V , f=1MHz Rev.B 1/3 Diodes zElectrical characteristic curves (Ta=25°C) FORWARD CURRENT:IF(mA) IF(mA) 100 Ta=125℃ 10 Ta=75℃ 1 0.1 Ta=25℃ Ta=-25℃ 0.01 0 100 200 300 400 500 600 700 800 VF(mV) FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT:IR(nA) IR(uA) 100 Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0 10 VR(V) 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) 400 Ta=25℃ 390 IF=10mA n=30pcs 380 370 360 AVE:370...