RB521G-30

RB521G-30 Diodes Schottky barrier diode RB521G-30 zApplication Rectifying small power zExternal dimensions (Units : mm) 1.0±0.05 1.4±0.05 zFeatures 1) Ultra small mold type. (VMD2) 2) High reliability 0.6±0.05 0.27±0.03 CATHODE MARK 0.13±0.03 F zConstruction Silicon epitaxial planer 0.5±0.05 ROHM : VMD2 EIAJ : JEDEC : zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak ∗ Junction temperature Storage temperature ∗ 60Hz, 1cyc. Symbol VR IO IFSM Tj Tstg Limits 30 100 1 125 −40~+125 Unit V mA A °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.350 10 Unit V µA IF=10mA VR=10V Conditions ∗ Please pay attention to static electricity when handling. 1/2 RB521G-30 Diodes zElectrical characteristic curves (Ta=25°C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1000 FORWARD CURRENT : IF (mA) 10m 125°C 75°C 25°C −25°C REVERSE CURRENT : IR (A) 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 100 10 1 0.1 0.01 0.001 0 100 1m 100µ 10µ 1µ 125°C 75°C 25°C −25°C 100n 10n 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) 200 300 400 500 600 FORWARD VOLTAGE : VF (mV) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means witho...