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RB521S30T1

ON Semiconductor

Schottky Barrier Diode

RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circ...


ON Semiconductor

RB521S30T1

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Description
RB521S30T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA Low Reverse Current MAXIMUM RATINGS Rating Reverse Voltage Forward Current DC ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model Symbol VR IF Value 30 200 Unit Vdc mA http://onsemi.com 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Range 1. FR−5 Minimum Pad Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 −55 to +125 Unit mW mW/°C °C/W °C 1 2 SOD−523 CASE 502 PLASTIC MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) Forward Voltage (IF = 200 mA) Symbol IR VF Min − − Typ − − Max 30.0 0.50 Unit mA Vdc 5Md 5M = Specific Device Code d = Date Code ORDERING INFORMATION Device RB521S30T1 RB521S30T5 Package SOD−523 SOD−523 Shipping† 4 mm Pitch 3000/Tape & Reel 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer t...




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