RB715W

Data Sheet Shottky barrier diode RB715W Applications Low current rectification Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planar Dimensions (Unit : mm) 1.6± 0.2 0.3±0.1 　　　 0.05 (3) 0.15±0.05 Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 0.8±0.1 1. 6±0. 2 0.1Min 0.7 0.7 1.3 0 .2± 0.1 　　- 0.05 (2) 0.5 0.5 1.0±0.1 (1) 0～0.1 0.55±0.1 0.7±0.1 ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) 0.6 EMD3 Structure 0.6 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φφ1.15.55±00..1 　　　　　00 0.3±0.1 1.75±0.1 8.0±0.2 1.8±0.2 5.5±0.2 3.5±0.05 0～0.1 1.8±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg φ0.5±0.1 Limits 40 40 30 200 125 40 to 125 Unit V V mA mA °C °C 0.9±0.2 Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF - - 0.37 IR - - 1 Ct - 2.0 - Unit Conditions V IF=1mA μA VR=10V pF VR=1.0V f=1.0MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C FORWARD VOLTAGE:VF(mV) RB715W Data Sheet FORWARD CURRENT:IF(mA) 100 Ta=125℃ 10 Ta=75℃ 1 0.1 Ta=-25℃ Ta=25℃ 0.01 0 500 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS...