Document
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RBV1500 - RBV1510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 15 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
Φ 3.2 ± 0.1
20 ± 0.3
+ ~~
13.5 ± 0.3
1.0 ± 0.1
11 ± 0.2 17.5 ± 0.5
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.11 grams ( Approximaly )
10 7.5 7.5
±0.2 ±0.2±0.2
2.0 ± 0.2 0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 7.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
RBV 1500
VRRM
50
VRMS
35
VDC 50
IF(AV)
RBV 1501 100
70 100
RBV 1502 200 140 200
RBV 1504 400 280 400
15
RBV 1506 600 420 600
RBV 1508 800 560 800
RBV 1510 1000 700 1000
UNIT
V V V A
IFSM 300 A
I2t VF IR IR(H) RθJC TJ TSTG
375 1.1 10 200 1.9 - 40 to + 150 - 40 to + 150
A2S V μA μA °C/W °C °C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.
Page 1 of 2
Rev. 05 : May 6, 2013
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( RBV1500 - RBV1510 )
AVERAGE FORWARD OUTPUT CURRENT AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
18 HEAT-SINK MOUNTING, Tc 5" x 4" x 3" THK.
15 (12.7cm x 12.7cm x 7.3cm) Al.-Finned plate
12
9
6
3
0 0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
0 12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
10
Pulse Width = 300 μs 1 % Duty Cycle
1.0
TJ = 25 °C 0.1
0.01 0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
REVERSE CURRENT, MICROAMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10 TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01 0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
FORWARD CURRENT, AMPERES
Page 2 of 2
Rev. 05 : May 6, 2013
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