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RBV1510 Dataheets PDF



Part Number RBV1510
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Datasheet RBV1510 DatasheetRBV1510 Datasheet (PDF)

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV1500 - RBV1510 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 13.5 ± 0.3 1.0 ± 0.1 1.

  RBV1510   RBV1510



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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV1500 - RBV1510 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 13.5 ± 0.3 1.0 ± 0.1 11 ± 0.2 17.5 ± 0.5 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.11 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 7.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL RBV 1500 VRRM 50 VRMS 35 VDC 50 IF(AV) RBV 1501 100 70 100 RBV 1502 200 140 200 RBV 1504 400 280 400 15 RBV 1506 600 420 600 RBV 1508 800 560 800 RBV 1510 1000 700 1000 UNIT V V V A IFSM 300 A I2t VF IR IR(H) RθJC TJ TSTG 375 1.1 10 200 1.9 - 40 to + 150 - 40 to + 150 A2S V μA μA °C/W °C °C Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate. Page 1 of 2 Rev. 05 : May 6, 2013 www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( RBV1500 - RBV1510 ) AVERAGE FORWARD OUTPUT CURRENT AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 18 HEAT-SINK MOUNTING, Tc 5" x 4" x 3" THK. 15 (12.7cm x 12.7cm x 7.3cm) Al.-Finned plate 12 9 6 3 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 250 200 TJ = 50 °C 150 100 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 12 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 TJ = 25 °C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS REVERSE CURRENT, MICROAMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD CURRENT, AMPERES Page 2 of 2 Rev. 05 : May 6, 2013 .


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