SILICON BRIDGE RECTIFIERS
RBV3500 - RBV3510
PRV : 50 - 1000 Volts Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2...
Description
RBV3500 - RBV3510
PRV : 50 - 1000 Volts Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation
+
13.5 ± 0.3
~ ~
11 ± 0.2
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1
Dimensions in millimeters
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 17.5 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYMBOL
RBV 3500 50 35 50
RBV 3501 100 70 100
RBV 3502 200 140 200
RBV 3504 400 2...
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