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RBV806 Dataheets PDF



Part Number RBV806
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Datasheet RBV806 DatasheetRBV806 Datasheet (PDF)

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV800 - RBV810 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 13.5 ± 0.3 1.0 ± 0.1 11.

  RBV806   RBV806



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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV800 - RBV810 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 13.5 ± 0.3 1.0 ± 0.1 11 ± 0.2 17.5 ± 0.5 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.97 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 4.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM RBV 800 50 VRMS 35 VDC 50 IF(AV) RBV 801 100 70 100 RBV 802 200 140 200 RBV 804 400 280 400 8.0 RBV 806 600 420 600 RBV 808 800 560 800 RBV 810 1000 700 1000 UNIT V V V A IFSM I2t VF IR IR(H) RθJC TJ TSTG 300 160 1.0 10 200 2.5 - 40 to + 150 - 40 to + 150 A A2S V μA μA °C/W °C °C Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink. Page 1 of 2 Rev. 05 : May 6, 2013 www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( RBV800 - RBV810 ) AVERAGE FORWARD OUTPUT CURRENT AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 12 HEAT-SINK MOUNTING, 10 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.- PLATE 8 6 Tc = 50°C 4 2 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 250 200 TJ = 50 °C 150 100 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 TJ = 25 °C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS REVERSE CURRENT, MICROAMPERES FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD CURRENT, AMPERES Page 2 of 2 Rev. 05 : May 6, 2013 .


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