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PBL40305 Dataheets PDF



Part Number PBL40305
Manufacturers Ericsson
Logo Ericsson
Description Multiband GSM Power Amplifier
Datasheet PBL40305 DatasheetPBL40305 Datasheet (PDF)

PBL 403 05 January 2001 PBL 403 05 Multiband GSM Power Amplifier Description. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or PCS1900 frequencies. The circuit uses an analog control signal to control the output power level. The circuit is housed in a specially designed QSOP28 (150 mil body) package with no speci.

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PBL 403 05 January 2001 PBL 403 05 Multiband GSM Power Amplifier Description. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or PCS1900 frequencies. The circuit uses an analog control signal to control the output power level. The circuit is housed in a specially designed QSOP28 (150 mil body) package with no special mounting requirements. The circuit is manufactured in a high performance MESFET process that ensures ruggednes for environmental variations. Key features. • One IC handles GSM900, DCS 1800 and PCS1900 bands. Low cost solution. Inputs matched to 50 Ω Digital band select function. Analog gain control. Proven GaAs MESFET-reliability. Tape and Reel. SMD QSOP 28 package. • • • • • • • VD1_DCS VD2_DCS CA VDC Current generator RFIN_DCS VD3_DCS BIAS VD1_GSM VD2_GSM VD3GSM VNEG VSEL VAPC Figure 1. Block diagram. Figure 2. Package outlook. 1 P B L 4 0 RFIN_GSM RFOUTGSM 3 0 5 PBL 403 05 Maximum Ratings: TAMB = + 25°C unless otherwise stated. Parameter Supply voltage Supply voltage Power control voltage Operating Case Temperature Storage Temperature Range Conditions short supply spike Symbol VDD VDD VAPC TCASE TSTORAGE -25 -30 Min. Typ. Max. 6.0 5.0 4.2 +80 +100 Unit V V V °C °C Electrical Characteristics for PA in GSM 900 mode: VCC = 3.2 V, TAMB = + 25°C, Z = 50 Ω, PIN = 10 dBm, f = 880 - 915 MHz and VAPC adjusted to give POUT = 34.5 dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 0.0 V. Parameter Output Power Power added efficiency 2 nd harmonic 3 rd harmonic Isolation Power degradation Stability and leakage spurious - 0 dBm < POUT < 34.5 dBm - 0 dBm < POUT < 34.5 dBm PIN = 11.5 dBm, VAPC <= 0.5 V TAMB = -25 °C to +75 °C PIN = 8.5 dBm, VSEL= 0.6 V, VAPC = 2.8 V, TAMB = -25 °C to +75 °C Output VSWR = 6:1 all phases All combinations of following parameters: POUT=5 to 34.5dBm(50Ω) VDD= 2.7 V to 5.1 V TAMB = -25 °C to +75 °C Noise power Input S11 Input S11 935 - 960 MHz 925 - 935 MHz VAPC = 0.5 V, POUT = 34.5dBm RBW = 30 kHz -5.2 -12 -90 -78 -5.0 -6.0 dBm dBm dBm dBm No parasitic oscillations when IDD < 2.2 A All spurious < -36 dBm 33 Conditions VAPC = 3.15 V Symbol POUT PAE 2 fo 3 fo Min. 34.5 50 Typ. 34.7 53 -7.0 -27 -30 0 0 -20 Max. Unit dBm % dBm dBm dBm dBm Electrical Characteristics for PA in DCS 1800 mode: VCC = 3.2 V, TAMB = + 25°C, Z = 50 Ω, PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and VAPC adjusted to give POUT = 31.5 dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 2.0 V. Parameter Output Power Power added efficiency 2 nd harmonic 3 rd harmonic Isolation Power degradation Conditions VAPC = 3.15 V POUT = 31.5 dBm - 0 dBm < POUT < 31.5 dBm - 0 dBm < POUT < 31.5 dBm PIN = 10.5 dBm, VAPC.


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