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RC30S08G Dataheets PDF



Part Number RC30S08G
Manufacturers Shanghai Sunrise Electronics
Logo Shanghai Sunrise Electronics
Description SILICON GPP CELL RECTIFIER
Datasheet RC30S08G DatasheetRC30S08G Datasheet (PDF)

SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01G THRU RC30S10G SILICON GPP CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids TECHNICAL SPECIFICATION MECHANICAL DATA • Polarity: Bottom or upper electrode denotes cathode according to the notice in package Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, resistive or i.

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SHANGHAI SUNRISE ELECTRONICS CO., LTD. RC30S01G THRU RC30S10G SILICON GPP CELL RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 30A FEATURES • Glass passivated junction chip • High surge capability • Solderable electrode surfaces • Ideal for hybrids TECHNICAL SPECIFICATION MECHANICAL DATA • Polarity: Bottom or upper electrode denotes cathode according to the notice in package Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (Ta=55oC) (Note 2) Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) Maximum Instantaneous Forward Voltage (at rated forward current) Maximum DC Reverse Current Ta=25oC (at rated DC blocking voltage) Ta=150 C o SYMBOL VRRM VRMS VDC IF(AV) IFSM VF IR RC30S RC30S RC30S RC30S RC30S RC30S UNITS 01G 02G 04G 06G 08G 10G 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 30 400 1.00 10 750 300 1 -50 to +150 o A A V µA µA pF C/W o C CJ Typical Junction Capacitance (Note 1) R Typical Thermal Resistance (Note 3) θ(ja) Storage and Operation Junction Temperature TSTG,TJ Note: 1. Measured at 1 MHz and applied voltage of 4.0Vdc 2. When mounted to heat sink from body. 3. Thermal resistance from junction to ambient. http://www.sse-diode.com .


RC30S08 RC30S08G RC30S10


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