PBR941

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. APPLICATIONS Communication and instrumentation systems. 1 handbook, halfpage PBR941 PINNING - SOT23 PIN 1 2 3 base emitter collector DESCRIPTION 3 3 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 Top view Marking code: V0. 2 MAM255 2 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL Cre fT GUM F Ptot Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER feedback capacitance transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz Ts = 60 °C; note 1 Ptot = 360 mW 8 15 1.4 − − TYP. 0.3 MAX. − − − − 360 320 UNIT pF GHz dB dB mW K/W 1998 Aug 10 2 Philips Semiconduct...