PBSS2540F

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES Low collector-emitter saturation voltage High current capability Improved thermal behaviour due to flat leads Enhanced performance over SOT23 general purpose transistors. APPLICATIONS General purpose switching and muting Low frequency driver circuits Audio frequency general purpose amplifier applications Battery driven equipment (mobile phones, video cameras, hand-held devices). DESCRIPTION handbook, halfpage PBSS2540F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 MAM410 NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3540F. 1 2 MARKING TYPE NUMBER PBSS2540F MARKING CODE 2C Fig.1 Top view Simplified outline (SC-89; SOT490) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C COND...