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PBSS4140T Dataheets PDF



Part Number PBSS4140T
Manufacturers NXP
Logo NXP
Description NPN low transistor
Datasheet PBSS4140T DatasheetPBSS4140T Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet PBSS4140T FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Batter.

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DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet PBSS4140T FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. UNIT 40 V 2A <500 mΩ PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T. handbook, halfpage 3 3 MARKING TYPE NUMBER PBSS4140T MARKING CODE(1) ZT* Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 1 Top view 1 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PBSS4140T NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2005 Feb 24 2 NXP Semiconductors 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet PBSS4140T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 MIN. − − − − − − − − −65 − −65 MAX. 40 40 5 1 2 1 300 450 +150 150 +150 UNIT V V V A A A mW mW °C °C °C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction in free air; note 1 to ambient in free air; note 2 TYPICAL 417 278 UNIT K/W K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. 2005 Feb 24 3 NXP Semiconductors 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet PBSS4140T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ICBO ICEO IEBO hFE VCEsat RCEsat VBEsat VBEon fT Cc collector-base cut-off current collector-emitter cut-off current VCB = 40 V; IE = 0 A VCB = 40 V; IE = 0 A; Tamb = 150 °C VCE = 30 V; IB = 0 A emitter-base cut-off current VEB = 5 V; IC = 0 A DC cur.


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