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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor
Product data sheet Supersedes data of 2005 Feb 14
2005 Feb 24
NXP Semiconductors
40 V, 1A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4140T
FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat
generation.
APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video
cameras and hand-held devices).
QUICK REFERENCE DATA
SYMBOL
VCEO ICM RCEsat
PARAMETER collector-emitter voltage peak collector current equivalent on-resistance
MAX. UNIT 40 V 2A <500 mΩ
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5140T.
handbook, halfpage
3
3
MARKING
TYPE NUMBER PBSS4140T
MARKING CODE(1) ZT*
Note
1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China.
1
Top view
1
2
MAM255
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS4140T
NAME −
PACKAGE DESCRIPTION plastic surface mounted package; 3 leads
VERSION SOT23
2005 Feb 24
2
NXP Semiconductors
40 V, 1A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4140T
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot
Tstg Tj Tamb
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation
storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2
MIN.
− − − − − − − − −65 − −65
MAX.
40 40 5 1 2 1 300 450 +150 150 +150
UNIT
V V V A A A mW mW °C °C °C
Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction in free air; note 1
to ambient
in free air; note 2
TYPICAL 417 278
UNIT K/W K/W
Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
2005 Feb 24
3
NXP Semiconductors
40 V, 1A NPN low VCEsat (BISS) transistor
Product data sheet
PBSS4140T
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICEO IEBO hFE
VCEsat
RCEsat VBEsat VBEon fT Cc
collector-base cut-off current
collector-emitter cut-off current
VCB = 40 V; IE = 0 A VCB = 40 V; IE = 0 A; Tamb = 150 °C VCE = 30 V; IB = 0 A
emitter-base cut-off current VEB = 5 V; IC = 0 A
DC cur.