DatasheetsPDF.com

QEB421

Fairchild Semiconductor

SURFACE MOUNT INFRARED

QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0....


Fairchild Semiconductor

QEB421

File Download Download QEB421 Datasheet


Description
QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) FEATURES 0.043 (1.1) 0.020 (0.5) SCHEMATIC Wavelength = 880 nm, AlGaAs Wide Emission Angle, 120° ANODE CATHODE ANODE 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) Surface Mount PLCC-2 Package High Power NOTES: 1. Dimensions are in inches (mm) 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature Reverse Voltage Peak Forward Current(4) Power Dissipation(1) (Flow)(2,3) Continuous Forward Current (TA = 25°C unless otherwise specified) Symbol Topr Tstg Tsol IF VR IFM PD Rating -55 to +100 -55 to +100 260 for 10 sec 100 5 1.75 180 Unit °C °C °C mA V A mW NOTES 1. Derate power dissipation linearly 2.4 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions; tp = 100 µs, T = 10 ms. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) MIN. TYP. MAX. UNITS SYMBOL Peak Emission Wavelength Spectral Bandwidth Emission Angle Forward Voltage Reverse Current Radiant Intensity Radiant Flux Temp. Coeff. of IE Temp. Coeff. of VF Temp. Coeff. of D Rise Time Fall Time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms IF...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)