PBSS4350S

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES High power dissipation (830 mW) Ultra low collector-emitter saturation voltage 3 A continuous current High current switching Improved device reliability due to reduced heat generation APPLICATIONS Medium power switching and muting Linear regulators DC/DC convertor Supply line switching circuits Battery management applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5350S. MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 50 3 5 <145 UNIT V A A mΩ 2 3 2 1 3 MAM259 Simplified outline (SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2001 Nov 19 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector ...