QEE113

PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE CATHODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. FEATURES λ= 940 nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50° Package Material: Clear Epoxy High Output Power Gray stripe on the top side © 2002 Fairchild Semiconductor Corporation Page 1 of 4 4/30/02 PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Unit °C °C °C °C mA V mW Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS...