PBSS5120T

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 20 V, 1 A PNP low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduced printed-circuit board requirements Cost effective alternative for MOSFETs in specific applications. APPLICATIONS Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting. Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage PBSS5120T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −20 −1 −2 250 UNIT V A A mΩ – Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. NPN complement: PBSS4120T. MARKING TYPE NUMBER PBSS5120T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5120T − DESCRIPTION MARKING CODE(1) *3K 3 3 1 2 1 2 MAM256 Top view Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 plastic surface mounted package; 3 leads 2003 Sep ...