PBSS5140D

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D302 PBSS5140D 40 V low VCEsat PNP transistor Product specification 2001 Nov 15 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. APPLICATIONS General purpose switching and muting LCD back-lighting Supply line switching circuits Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCEsat transistor in an SC-74 (SOT457) plastic package. MARKING TYPE NUMBER PBSS5140D MARKING CODE 51 1 Top view PBSS5140D QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base n.c. collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. UNIT −40 −1 −2 <500 V A A mΩ handbook, halfpage 6 5 4 1, 2, 5 3 6 2 3 MAM458 Fig.1 Simplified outline (SC-74; SOT457) and symbol. LIMITING VALUES SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated and mounting pad for collector 1 cm2. 2001 Nov 15 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Ta...