PBSS5140V

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Oct 19 2002 Mar 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor FEATURES 300 mW total power dissipation Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package Improved thermal behaviour due to flat leads Self alignment during soldering due to straight leads Low collector-emitter saturation voltage High current capability APPLICATIONS General purpose switching and muting LCD back lighting Supply line switching circuits Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. MARKING handbook, halfpage PBSS5140V QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 DESCRIPTION collector collector base emitter collector collector PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. −40 −1 −2 UNIT V A A mΩ equivalent on-resistance <340 6 5 4 1, 2, 5, 6 3 TYPE NUMBER PBSS5140V 25 MARKING CODE 4 1 Top view 2 3 MAM446 Fig.1 Simplified outline (SOT666) and symbol. 2002 Mar 20 2 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage ...