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QL4016-1PF100M Datasheet, Equivalent, Embedded RAM.16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM 16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM |
　
　
　
| Part | QL4016-1PF100M |
|---|---|
| Description | 16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM |
| Feature | QL4016 QuickRAM Data Sheet
• • • â €¢ • • 16,000 Usable PLD Gate Quick RAM ESP Combining Performance, Density and Embedded RAM Device Highlights Hig h Performance & High Density • 16,000 Usable PLD Gates with 118 I/Os • 300 MHz 16-bit Counters, 400 MHz Advanced I/O Capabilities • Interfaces with b oth 3. 3 V and 5. 0 V devices • PCI com pliant with 3. 3 V and 5. 0 V busses Dat apaths, 160+ MHz FIFOs • 0. 35 µm fou r-layer metal non-volatile CMOS process for smallest die sizes for -1/-2/-3/- 4 speed grades • Full JTAG boundary s can • I/O Cells with individually con trolled Registered Input Path and Outpu t . |
| Manufacture | ETC |
| Datasheet |
| Part | QL4016-1PF100M |
|---|---|
| Description | 16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM |
| Feature | QL4016 QuickRAM Data Sheet
• • • â €¢ • • 16,000 Usable PLD Gate Quick RAM ESP Combining Performance, Density and Embedded RAM Device Highlights Hig h Performance & High Density • 16,000 Usable PLD Gates with 118 I/Os • 300 MHz 16-bit Counters, 400 MHz Advanced I/O Capabilities • Interfaces with b oth 3. 3 V and 5. 0 V devices • PCI com pliant with 3. 3 V and 5. 0 V busses Dat apaths, 160+ MHz FIFOs • 0. 35 µm fou r-layer metal non-volatile CMOS process for smallest die sizes for -1/-2/-3/- 4 speed grades • Full JTAG boundary s can • I/O Cells with individually con trolled Registered Input Path and Outpu t . |
| Manufacture | ETC |
| Datasheet |
　
　
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