PBSS5350S

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS5350S 50 V low VCEsat PNP transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor FEATURES High power dissipation (830 mW) Ultra low collector-emitter saturation voltage 3 A continuous current High current switching Improved device reliability due to reduced heat generation APPLICATIONS Medium power switching and muting Linear regulators DC/DC convertor Supply line switching circuits Battery management applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4350S. MARKING TYPE NUMBER PBSS5350S MARKING CODE S5350S Fig.1 1 handbook, halfpage PBSS5350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −3 −5 <150 UNIT V A A mΩ 2 3 2 1 3 MAM285 Simplified outline (SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2001 Nov 19 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collect...