PBSS5540Z

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Jan 26 2001 Sep 21 NXP Semiconductors 40 V low VCEsat PNP transistor Product data sheet PBSS5540Z FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) MOSFET driver applications. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat emitter-collector voltage collector current (DC) peak collector current equivalent on-resistance MAX −40 −5 −10 <80 UNIT V A A mΩ PINNING PIN 1 base 2 collector 3 emitter 4 collector DESCRIPTION DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. MARKING TYPE NUMBER PBSS5540Z MARKING CODE PB5540 handbook, halfpage 4 2, 4 1 1 Top view 2 3 MAM288 3 Fig.1 Simplified outline (SOT223) and symbol. 2001 Sep 21 2 NXP Semiconductors 40 V low VCEsat PNP transistor Product data sheet PBSS5540Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissi...