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QM100DY-24BK Dataheets PDF



Part Number QM100DY-24BK
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH POWER SWITCHING USE INSULATED TYPE
Datasheet QM100DY-24BK DatasheetQM100DY-24BK Datasheet (PDF)

MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24BK • • • • • IC Collector current .... 100A VCEX Collector-emitter voltage .... 1200V hFE DC current gain.... 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4–φ6.5 93±0.25 B2X B2 E2 B2.

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MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24BK • • • • • IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4–φ6.5 93±0.25 B2X B2 E2 B2 E2 6 48±0.25 15 62 B2X C2E1 E2 30 C1 C2E1 E2 B1 E1 C1 10.5 6 B1X 9 B1X 14 8 15.3 3 25 25 21.5 3 8 1.8 Tab#110, t=0.5 E1 B1 3–M6 17 8 17 8 17 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 100 100 800 5 1000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1,96~2.94 20~30 470 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25°C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=100A, IB=130A –IC=100A (diode forward voltage) IC=100A, VCE=4V Min. — — — — — — 750 — VCC=600V, IC=100A, IB1=0.2A, –IB2=2A — — Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) — — — Typ. — — — — — — — — — — — — — Max. 4.0 4.0 100 4.0 4.0 1.8 — 2.5 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25°C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=10V COLLECTOR CURRENT IC (A) 160 IB=200mA IB=130mA IB=400mA 120 80 IB=40mA DC CURRENT GAIN hFE VCE=4.0V IB=20mA 40 0 Tj=25°C Tj=125°C 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 3 2 VCE=4.0V Tj=25°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 BASE CURRENT IB (A) SATURATION VOLTAGE 10 0 7 5 4 3 2 10 –1 7 5 4 3 2.6 VBE(sat) VCE(sat) IB=130mA Tj=25°C Tj=125°C 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 3.0 3.4 3.8 4.2 4.6 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 IC=130A 4 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 3 IC=100A 2 IC=50A SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 ts tf ton 1 Tj=25°C Tj=125°C 0 3 5 7 10 –2 2 3 5 7 10 –12 3 5 7 10 0 2 3 VCC=600V IB1=200mA IB2=–2A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 240 ts, tf (µs) ts 10 1 7 5 4 3 2 10 0 7 5 4 3 COLLECTOR CURRENT IC (A) 200 160 120 80 40 0 SWITCHING TIME tf VCC=600V IB1=200mA IC=100A Tj=25°C Tj=125°C 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 Tj=125°C –IB2=2A 0 200 400 600 800 1000 1200 1400 BASE REVERSE CURRENT –IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 90 100µs 1ms DC 200µs 50µs DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 1 7 5 3 2 TC=25°C NON–REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C) COLLECTOR REVERSE CURRENT –IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2 3 5 7 10 2 0.25 0.20 Zth (j–c) (°C/ W) 0.15 10 2 .


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