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QM100DY-HBK

Mitsubishi Electric Semiconductor

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK • • • • • IC Collector...


Mitsubishi Electric Semiconductor

QM100DY-HBK

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MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 4–φ5.5 18.8 23 23 17.5 1.3 9 C2E1 80±0.25 9.5 20.5 3–M5 9±0.1 (12) (12) (12) B1 E1 Tab#110, t=0.5 6 12 48±0.25 E2 C1 61 30 E2 B2 6 12 LABEL 8 20.5 28 29 +1.5 – 0.5 B2X B1X B2X B2 E2 C1 C2E1 E2 B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 100 620 6 1000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15...




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