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QM150 Dataheets PDF



Part Number QM150
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH POWER SWITCHING USE INSULATED TYPE
Datasheet QM150 DatasheetQM150 Datasheet (PDF)

MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H • • • • • IC Collector current .... 150A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION UPS, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 6 23 95 80 23 23.5 6 φ5.5 B2X B2 E2 E 2 E1 B1X E1 B1 6 12 6 21.5 B2X 62 48 30 C2 E2E.

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MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H • • • • • IC Collector current ........................ 150A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION UPS, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 6 23 95 80 23 23.5 6 φ5.5 B2X B2 E2 E 2 E1 B1X E1 B1 6 12 6 21.5 B2X 62 48 30 C2 E2E1 C1 B2 E2 C2 C1 B1X E1 B1 M5 Tab#110, t=0.5 7 30 LABEL 21 12 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 150 150 690 9 1500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25°C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=2A –IC=150A (diode forward voltage) IC=150A, VCE=2V/5V Min. — — — — — — 75/100 — VCC=300V, IC=150A, IB1=–IB2=3A — — Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) — — — Typ. — — — — — — — — — — — — — Max. 2.0 2.0 150 2.0 2.5 1.85 — 2.5 12 3.0 0.18 0.6 0.1 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 300 Tj=25°C IB=3.0A 240 IB=2.0A 180 IB=1.0A IB=0.5A 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) VCE=5.0V VCE=2.0V DC CURRENT GAIN hFE Tj=25°C Tj=125°C 60 IB=0.1A 0 0 1 2 3 4 5 7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 1.0 1.4 1.8 2.2 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 VCE=2.0V Tj=25°C VBE(sat) VCE(sat) SATURATION VOLTAGE IB=2A Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 2.6 3.0 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 VCC=300V IB1=–IB2=3A Tj=25°C Tj=125°C ton, ts, tf (µs) Tj=25°C Tj=125°C ts 3 2 IC=200A 1 IC=50A IC=100A IC=150A SWITCHING TIME 0 10 –1 2 3 4 5 710 0 2 3 4 5 7 10 1 2 3 45 7 10 2 10 0 ton tf 7 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 400 Tj=125°C ts, tf (µs) ts COLLECTOR CURRENT IC (A) 300 IB2=–2A 200 IB2=–5A SWITCHING TIME tf 10 0 VCC=300V 7 IC=150A 5 IB1=3A 4 Tj=25°C 3 Tj=125°C 2 10 –1 2 3 4 5 7 10 0 100 2 3 4 5 7 10 1 0 0 200 400 600 800 BASE REVERSE CURRENT –IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) tw=50µS 100µS DERATING FACTOR (%) 10 2 7 5 3 2 50 0 1m µS S S 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 m 10 1 7 5 3 TC=25°C 2 NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT –IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.2 0.16 DC 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (°C) 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTER.


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