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QM150DY-2HK

Mitsubishi Electric Semiconductor

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • • • • • IC Collector...


Mitsubishi Electric Semiconductor

QM150DY-2HK

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MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4–φ6.5 93±0.25 B2X B2 E2 B2X 48±0.25 C2E1 30 E2 E2 B2 6 15 B1 E1 62 C1 C1 10.5 6 C2E1 E2 B1X 9 B1X 14 8 15.3 3 17 25 8 17 25 8 17 21.5 3 8 1.8 E1 B1 3–M6 Tab#110, t=0.5 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 150 150 1000 8 1500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)...




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