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QM15KD-HB Dataheets PDF



Part Number QM15KD-HB
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description MEDIUM POWER SWITCHING USE INSULATED TYPE
Datasheet QM15KD-HB DatasheetQM15KD-HB Datasheet (PDF)

MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB • • • • • IC Collector current . 15A VCEX Collector-emitter voltage . 600V hFE DC current gain.... 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm R6 11 11 11 12.5 10.5 10.5 18.5.

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MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB • • • • • IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm R6 11 11 11 12.5 10.5 10.5 18.5 BuP BvP BwP K P 2–φ5.5 K P 30 18 9 U V W 42 BuP R S T U BuN A T S R N BuN BvN BwN BvP V BvN BwP W BwN N 18 93 110 18 15 8 A (24.45) LABEL 6.5 Tab#110, t=0.5 Tab#250, t=0.8 15 (23.6) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) (Inverter part, Tj=25°C) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 76 1 150 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing (Converter part, Tj=25°C) Conditions Ratings 800 900 220 Three phase full wave rectifying circuit, Tc=79°C One half cycle at 60 Hz, peak value Value for one cycle of surge current 30 300 375 Unit V V V A A A2s ABSOLUTE MAXIMUM RATINGS Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Common) Conditions Ratings –40~150 –40~125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 125 Unit °C °C V N·m kg·cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Inverter part, Tj=25°C) Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=60mA –IC=15A (diode forward voltage) IC=15A, VCE=2V Limits Min. — — — — — — 250 — VCC=300V, IC=15A, IB1=90mA,–IB2=0.3A — — Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied — — — Typ. — — — — — — — — — — — — — Max. 1.0 1.0 40 2.0 2.5 1.5 — 1.5 10 2.0 1.65 2.8 0.35 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W ELECTRICAL CHARACTERISTIC.


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