MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15TB-2HB
• • • • •
IC Collector...
MITSUBISHI
TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15TB-2HB
IC Collector current .......................... 15A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107 81 20 O
P
P 21.5 17.5 2–φ5.5 BuP EuP BvP EvP V BvN EvN BwP EwP W BwN EwN
21.5
BuP EuP BvP EvP BwP EwP
45
21
18
30
U N
V
W
U BuN EuN N
O
BuN EuN BvN EvN BwN EwN
7.5 14 7.5 14 7.5 16 93 Tab#110, t=0.5 (Fig. 2) Tab#250, t=0.8 (Fig. 1)
φ1.65
Fig. 1 8 6.35
Fig. 2 3.8 2.8
φ1.2
28.2
3.4 7.95
7.5
5.5
Note: All
Transistor Units are 3-Stage Darlingtons.
1
1
7.1
LABEL
17.5
Feb.1999
MITSUBISHI
TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode curren...