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QM200DY-2HB

Mitsubishi Electric Semiconductor

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-2HB • • • • • IC Collector...


Mitsubishi Electric Semiconductor

QM200DY-2HB

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MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-2HB IC Collector current ........................ 200A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 112 93±0.25 25 25 Dimensions in mm 21.5 17 6 B1 E1 26 6 5 14 8 5 4–φ6.5 3 – M6 1 17 8 17 8 17 Tab#110, t=0.5 B2X 2.8 8.5Min. 6 70±0.25 89 C2E1 E2 C1 E2 B2 15 15 B1X MAX 1 LABEL 21 (7) B2X 6 B2 E2 C1 C2E1 E2 B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 200 200 1560 10 2000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500...




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