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PBYL2025 Dataheets PDF



Part Number PBYL2025
Manufacturers NXP
Logo NXP
Description Rectifier diodes Schottky barrier
Datasheet PBYL2025 DatasheetPBYL2025 Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYL2025 series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k 1 a 2 IF(AV) = 20 A VF ≤ 0.43 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025 series is supplied in t.

  PBYL2025   PBYL2025


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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYL2025 series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k 1 a 2 IF(AV) = 20 A VF ≤ 0.43 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025 series is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20 20 20 20 20 40 180 200 2 150 175 MAX. 25 25 25 25 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg March 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYL2025 series MIN. - TYP. MAX. UNIT 60 1.5 K/W K/W in free air - ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 20 A; Tj = 150˚C IF = 20 A; Tj = 125˚C IF = 40 A; Tj = 125˚C IF = 40 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.36 0.39 0.55 0.59 0.4 30 1230 0.43 0.45 0.62 0.65 10 60 V V V V mA mA pF IR Cd Reverse current Junction capacitance March 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL2025 series 15 Forward dissipation, PF (W) Vo = 0.27 V Rs = 0.00875 Ohms PBYL2025 0.5 Tmb(max) / C 127.5 D = 1.0 135 1A 100mA IR / A 150 C 125 C PBYR1625 0.2 10 0.1 10mA 100 C 1mA 75 C 50 C 5 I tp tp 142.5 D= T t 100uA Tj = 25 C 10uA T 0 0 5 10 15 20 25 Average forward current, IF(AV) (A) 150 30 1uA 0 5 10 VR / V 15 20 25 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 15 Forward dissipation, PF (W) Vo = 0.270 V Rs = 0.00875 Ohms PBYL2025 Tmb(max) / C 127.5 a = 1.57 1.9 135 10000 Cd / pF PBYR1625 10 4 2.8 2.2 1000 5 142.5 0 0 5 10 15 Average forward current, IF(AV) (A) 150 20 100 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. PBYR1625 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. Transient thermal impedance, Zth j-mb (K/W) 50 IF / A Tj = 25 C Tj = 125 C 10 40 typ 30 max 1 0.1 20 0.01 10 P D tp D= tp T t 0 0 0.2 0.4 VF / V 0.6 0.8 1 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; Zth j-mb = f(tp). March 1998 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g PBYL2025 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYL2025 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given.


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