DatasheetsPDF.com

PBYL2025B Dataheets PDF



Part Number PBYL2025B
Manufacturers NXP
Logo NXP
Description Rectifier diodes Schottky barrier
Datasheet PBYL2025B DatasheetPBYL2025B Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYL2025B series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k tab a 3 IF(AV) = 20 A VF ≤ 0.43 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025B series is supplied .

  PBYL2025B   PBYL2025B



Document
Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYL2025B series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k tab a 3 IF(AV) = 20 A VF ≤ 0.43 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode 1 anode SOT404 tab 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20B 20 20 20 20 40 180 200 2 150 175 MAX. 25B 25 25 25 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1. It is not possible to make connection to pin 2 ofthe SOT404 package. March 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYL2025B series MIN. - TYP. MAX. UNIT 50 1.5 K/W K/W pcb mounted, minimum footprint, FR4 board - ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 20 A; Tj = 150˚C IF = 20 A; Tj = 125˚C IF = 40 A; Tj = 125˚C IF = 40 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.36 0.39 0.55 0.59 0.4 30 1230 0.43 0.45 0.62 0.65 10 60 V V V V mA mA pF IR Cd Reverse current Junction capacitance March 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL2025B series 15 Forward dissipation, PF (W) Vo = 0.27 V Rs = 0.00875 Ohms PBYL2025 0.5 Tmb(max) / C 127.5 D = 1.0 135 1A 100mA IR / A 150 C 125 C PBYR1625 0.2 10 0.1 10mA 100 C 1mA 75 C 50 C 5 I tp tp 142.5 D= T t 100uA Tj = 25 C 10uA T 0 0 5 10 15 20 25 Average forward current, IF(AV) (A) 150 30 1uA 0 5 10 VR / V 15 20 25 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 15 Forward dissipation, PF (W) Vo = 0.270 V Rs = 0.00875 Ohms PBYL2025 Tmb(max) / C 127.5 a = 1.57 1.9 135 10000 Cd / pF PBYR1625 10 4 .


PBYL2025 PBYL2025B PBYL2520CT


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)