Document
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
PBYL2025B series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V
k tab
a 3
IF(AV) = 20 A VF ≤ 0.43 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025B series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION no connection cathode 1 anode
SOT404
tab
2
cathode
1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20B 20 20 20 20 40 180 200 2 150 175 MAX. 25B 25 25 25 UNIT V V V A A A A A ˚C ˚C
IRRM Tj Tstg
1. It is not possible to make connection to pin 2 ofthe SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL2025B series
MIN. -
TYP. MAX. UNIT 50 1.5 K/W K/W
pcb mounted, minimum footprint, FR4 board
-
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 20 A; Tj = 150˚C IF = 20 A; Tj = 125˚C IF = 40 A; Tj = 125˚C IF = 40 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.36 0.39 0.55 0.59 0.4 30 1230 0.43 0.45 0.62 0.65 10 60 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL2025B series
15
Forward dissipation, PF (W)
Vo = 0.27 V Rs = 0.00875 Ohms
PBYL2025 0.5
Tmb(max) / C 127.5 D = 1.0 135
1A 100mA
IR / A 150 C 125 C
PBYR1625
0.2 10 0.1
10mA 100 C 1mA 75 C 50 C
5
I
tp
tp 142.5 D= T t
100uA Tj = 25 C 10uA
T
0
0
5
10 15 20 25 Average forward current, IF(AV) (A)
150 30
1uA 0 5 10 VR / V 15 20 25
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
15
Forward dissipation, PF (W)
Vo = 0.270 V Rs = 0.00875 Ohms
PBYL2025
Tmb(max) / C 127.5 a = 1.57 1.9 135
10000
Cd / pF
PBYR1625
10
4
.