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QM300DY-2HB

Mitsubishi Electric Semiconductor

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector...


Mitsubishi Electric Semiconductor

QM300DY-2HB

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MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 114 27 M8 25 21.5 2–M6 Dimensions in mm B2X C2E1 E2 B 2 6 21 93±0.3 114 E2 38 E2 7 B1X C1 B1 E1 14 18 14 8 5.5 4–φ6.5 93±0.3 4.75(t=0.8) 6.5MIN. 6 2.8(t=0.5) 25 5 20 5 1 6 15 6 B2X E2 20 9.5 37.5 31MAX. LABEL 21 B2 C2E1 C1 (7) B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 300 300 1980 16 3000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal ...




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