Document
MITSUBISHI TRANSISTOR MODULES
QM300HA-24
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300HA-24
• • • • •
IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 93 E 16 BX 9 3 C φ6.5
4
E BX
C
20
20
9 B 16
48
62
B (13) (21) (29)
4
M4
6.5 M6
41.5
M6
25.5
LABEL
36
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-24
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 300 300 1980 16 3000 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 460 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm N·m kg·cm N·m kg·cm g
Mounting screw M6 — Mounting torque B terminal screw M4
BX terminal screw M4 — Weight Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=300A, IB=6A –IC=300A (diode forward voltage) IC=300A, VCE=5V Min. — — — — — — 75 — VCC=600V, IC=300A, IB1=–IB2=6A — — Transistor part Diode part Conductive grease applied — — — Typ. — — — — — — — — — — — — — Max. 4.0 4.0 400 3.0 3.5 1.8 — 3.0 15 3.0 0.063 0.3 0.04 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-24
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
500 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCE=2.8V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25°C Tj=125°C VCE=5.0V
COLLECTOR CURRENT IC (A)
400
IB=6.0A IB=3.0A
300 IB=1.0A 200
IB=2.0A IB=0.5A
100 Tj=25°C 0 1 2 3 4 5
0
COLLECTOR-EMITTER VOLTAGE
VCE (V)
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 –1 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2 10 0 7 5 4 3 2 10–1 10 0
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE(sat)
VCE=2.8V Tj=25°C 3.4 3.8
IB=6A Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 4
IC=300A
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 Tj=25°C Tj=125°C ts VCC=600V IB1=–IB2=6A
3
2
SWITCHING TIME
IC=200A
ton, ts, tf (µs)
IC=100A
tf
1
Tj=25°C Tj=125°C 0 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
ton
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM300HA-24
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10–1 VCC=600V IB1=6A IC=300A Tj=25°C Tj=125°C ts
REVERSE BIAS SAFE OPERATING AREA 640 COLLECTOR CURRENT IC (A) 560 480 IB2=–12A 400 320 240 160 80
Tj=125°C
ts, tf (µs)
IB2=–6A
SWITCHING TIME
tf
2 3 4 5 7 10 0
2 3 4 5 7 10 1
0
0
400
800
1200
1600 VCE (V)
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC=25°C 2 NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 50µS
200
1m
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
DC
100µS
SECOND BREAKDOWN AREA
COLLECTOR REVERSE CURRENT –IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 0.08 0.07 0.06 Zth (j–c) (°C/ W) 0.05 0.04 0.03 0.02 0.01 0 10–3 2 3 4 5 7 10–2 2 3 4 5 7 10–1 2 3 4 5 7.