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PBYL3020CT Dataheets PDF



Part Number PBYL3020CT
Manufacturers NXP
Logo NXP
Description Rectifier diodes Schottky barrier
Datasheet PBYL3020CT DatasheetPBYL3020CT Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYL3025CT, PBYL3025CTB series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 30 A VF ≤ 0.43 V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL302.

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYL3025CT, PBYL3025CTB series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 30 A VF ≤ 0.43 V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL3025CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL3025CTB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 drain 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL30 PBYL30 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 20 20 20 30 30 135 150 1 150 175 25CT 25CTB 25 25 25 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1. It is not possible to make connection to pin 2 of the SOT404 package. March 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYL3025CT, PBYL3025CTB series MIN. - TYP. MAX. UNIT 60 50 2 1.5 K/W K/W K/W K/W per diode both diodes SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint, FR4 board ELECTRICAL CHARACTERISTICS All characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 30 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.35 0.38 0.52 0.6 1 22 700 0.43 0.46 0.6 0.67 5 40 V V V V mA mA pF IR Cd Reverse current Junction capacitance March 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL3025CT, PBYL3025CTB series 12 10 8 Forward dissipation, PF (W) Vo = 0.32 V Rs = 0.009 Ohms PBYL3025CT Tmb(max) / C D = 1.0 126 130 134 1A IR / A Tj = 150 C PBYR2025CT 0.5 0.2 0.1 100mA 125 10mA 100 75 50 100uA 25 6 4 2 T t I tp 138 1mA D= tp 142 T 146 150 25 0 0 5 10 15 20 Average forward current, IF(AV) (A) 10uA 0 5 10 VR / V 15 20 25 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Forward dissipation, PF (W) Vo = 0.32 V Rs = 0.009 Ohms Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 10 8 PBYL3025CT Tmb(max) / C a = 1.57 130 134 10000 Cd / pF PBYR2025CT 2.2 2.8 4 1.9 6 4 2 0 138 1000 142 146 150 15 0 5 10 Average forward current, IF(AV) (A) 100 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). PBYR2025CT typ Tj = 25 C Tj = 125 C max Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 30 25 20 15 10 IF / A 10 Transient thermal impedance, Zth j-mb (K/W) 1 0.1 0.01 P D tp D= tp T t 5 0 0.001 1us T 0 0.2 0.4 VF / V 0.6 0.8 1 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL3025CT Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). March 1998 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g PBYL3025CT, PBYL3025CTB series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max PBYL3025CT, PBYL3025CTB series 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.8. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.9. SOT404 : soldering patt.


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