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QM30DY-H Dataheets PDF



Part Number QM30DY-H
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description MEDIUM POWER SWITCHING USE INSULATED TYPE
Datasheet QM30DY-H DatasheetQM30DY-H Datasheet (PDF)

MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 10.5 13 10.5 80 .

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MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30DY-H • • • • • IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 20 10.5 13 10.5 80 20 27 φ6.5 B2 E2 (7) B2 E2 C1 C2E1 E2 34 C2E1 E2 C1 12 E1 B1 E1 B1 M5 Tab#110, t=0.5 6.5 31 LABEL (8) 22.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 30 30 250 1.8 300 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25°C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A –IC=30A (diode forward voltage) IC=30A, VCE=2V/5V Min. — — — — — — 75/100 — VCC=600V, IC=30A, IB1=–IB2=0.6A — — Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) — — — Typ. — — — — — — — — — — — — — Max. 1.0 1.0 200 2.0 2.5 1.85 — 1.5 12 3.0 0.5 2.0 0.15 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25°C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) VCE=5.0V 80 IB=2.0A 60 IB=1.0A IB=0.5A 40 IB=0.3A 20 IB=0.1A DC CURRENT GAIN hFE VCE=2.0V Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 1.0 1.4 1.8 2.2 2.6 3.0 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 BASE CURRENT IB (A) Tj=25°C VCE=2.0V VBE(sat) SATURATION VOLTAGE 10 0 7 VCE(sat) 5 4 3 IB=0.4A 2 Tj=25°C Tj=125°C 10–1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj=25°C Tj=125°C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 4 ton, ts, tf (µs) ts VCC=300V IB1=–IB2=0.6A tf ton 3 2 IC=30A 1 IC=10A IC=20A SWITCHING TIME 0 10 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 10 –1 10 0 Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 VCC=300V IB1=0.6A IC=30A Tj=25°C Tj=125°C REVERSE BIAS SAFE OPERATING AREA 70 COLLECTOR CURRENT IC (A) ts, tf (µs) 60 50 40 30 20 10 Tj=125°C 10 1 7 5 4 3 2 10 0 7 5 4 3 10 –1 ts SWITCHING TIME IB2= –1A –3A –5A tf 2 3 4 5 7 10 0 2 3 4 5 7 10 1 0 0 100 200 300 400 500 600 700 BASE REVERSE CURRENT –IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 TC=25°C 2 NON–REPETITIVE 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 0µ 50 0µ 1m S COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT –IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 10 2 0.5 0.4 D C S S 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (°C) Zth (j–c) (°C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER.


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