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QM30TB-2H

Mitsubishi Electric Semiconductor

Transistor Module

MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H • • • • • IC Collector c...


Mitsubishi Electric Semiconductor

QM30TB-2H

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MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, NC equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 7.5 21 7.5 21 7.5 16.5 19 28.5 28.5 21.5 2–φ5.5 P BuP EuP BvP EvP U BuN BuN EuN BvN EvN BwN EwN 98 110 Tab#110, t=0.5 Tab#250, t=0.8 EuN N BvN EvN V BwN EwN BwP EwP W BuP EuP BvP EvP BwP EwP P 25 18 40 25.6 U N V W 26.5 LABEL 17.5 56 Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 30 30 310 2 300 –40~+150 –...




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