QM30TF-HB

MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TF-HB IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 81 20 21.5 BvP EvP 21.5 17.5 2–φ5.5 φ1.65 Fig. 1 8 6.35 Fig. 2 3.8 2.8 φ1.2 BuP EuP P BwP EwP 18 45 21 U N BuN EuN V W 30 7.95 BvN EvN BwN EwN 93 Tab#110, t=0.5(Fig. 2) Tab#250, t=0.8(Fig. 1) P BuP EuP BvP EvP U V BvN EvN BwP EwP W BwN EwN 28.2 7.5 LABEL 17.5 BuN EuN N Note: All Transistor Units are 3-Stage Darlingtons. 1 7.5 14 7.5 14 7.5 16 3.4 1 5.5 7.1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25...