Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast...
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance
PBYL3025CT, PBYL3025CTB series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 30 A VF ≤ 0.43 V
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual
schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL3025CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL3025CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL30 PBYL30 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 2...