MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50E2Y/E3Y-H
• • • • •
IC Col...
MITSUBISHI
TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50E2Y/E3Y-H
IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20
10.5 13 10.5
(E2Y) (7) 20 27 φ6.5 E1 D2 D1 A1 C1
80
34
E1 B1
12 B1 M5 Tab#110, t=0.5
6.5
E1 (E3Y) D2 D1 C1 E1 K1
31
LABEL
(8)
22.5
E1
B1
MITSUBISHI
TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(
Transistor part including D1, Tj=25°C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing
(Diode par...