Document
MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50HA-H
• • • • •
IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5 43.3 8 8 C
B
E
9
5.3 36.5
9
14
B
C φ5.3 8 E M4 3.5 33 3.5 R6
4.5
24
LABEL
22
7
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
—
Mounting torque Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A –IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. — — — — — — 75/100 — VCC=300V, IC=50A, IB1=–IB2=1A — — Transistor part Diode part Conductive grease applied — — — Typ. — — — — — — — — — — — — — Max. 1.0 1.0 200 2.0 2.5 1.75 — 1.5 12 3.0 0.4 1.3 0.15 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25°C COLLECTOR CURRENT IC (A) 80 IB=0.3A 60 IB=0.2A IB=0.1A IB=1A IB=0.65A DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=5.0V VCE=2.0V 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
40
20
0
Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
1.0
2.0
3.0
4.0
5.0 VCE (V)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 1.2 1.6 2.0 2.4 2.8 VBE (V) 3.2
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2
BASE CURRENT IB (A)
VCE=2.0V Tj=25°C
VBE(sat)
SATURATION VOLTAGE
10 0 7 5 VCE(sat) 4 3 IB=0.65A 2 Tj=25°C Tj=125°C 10 –1 0 10 2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (µs) Tj=25°C Tj=125°C 4 2 10 1 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ts VCC=300V IB1=–IB2=1A
3
2
SWITCHING TIME
1 IC=20A 0 10 –2 2 3 4 5 7 10 –1 IC=30A IC=50A 2 3 4 5 7 10 0
10 0 7 5 4 3 2 10 0
ton Tj=25°C Tj=125°C 2 3 4 5 7 10 1
tf
2 3 4 5 7 10 2 IC (A)
BASE CURRENT IB (A)
COLLECTOR CURRENT
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
REVERSE BIAS SAFE OPERATING AREA
160
Tj=125°C
ts, tf (µs)
ts 10 1 7 VCC=300V 5 IB1=1A 4 IC=50A 3 2 tf 10 0 7 5 4 3 10 –1 Tj=25°C Tj=125°C 2 3 4 5 7 10 0 2 3 4 5 7 10 1
COLLECTOR CURRENT IC (A)
140 120 100 80 60 40 20 0 0 200 400 600 800 IB2=–1A IB2=–3A IB2=–5A IB2=–10A
SWITCHING TIME
BASE REVERSE CURRENT –IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25°C NON–REPETITIVE 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
DERATING FACTOR OF F. B. S. O. A.
100 90
COLLECTOR CURRENT IC (A)
10
D C
m
s
50 10 0µ 0µ s s
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT –IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 0.5
1m s
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
VCE (V)
CASE TEMPERATURE
TC (°C)
0.4
Zth (j–c) (°C/ W)
0.3
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.2
0.1 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 7 10 .