Document
MITSUBISHI TRANSISTOR MODULES
QM50TB-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50TB-24
• • • • •
IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102±0.5 6 14 6 14 6 17 7–M4
4–φ5.5 BuP BvP EvP BvN EvN U V BwP EwP BwN EwN N N W P
BuP EuP
BvP EvP
BwPEwP
P
30 16.5
P
EuP BuN EuN
74±0.25
30
24.5
8.5
17
2 22 20 20 80±0.25 22 11 Tab#110, t=0.5
8.1 30+1.5 –0.5 29.5
LABEL
7
27
N
10
43
U
V
W
N
12
Note: All Transistor Units are 3-Stage Darlingtons.
91±0.5
P
BuN EuN BvN EvN BwN EwN
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50TB-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 50 50 400 3 500 –40~+150 –40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 660 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
—
Mounting torque Mounting screw M5
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=50A, IB=1A –IC=50A (diode forward voltage) IC=50A, VCE=5V Min. — — — — — — 75 — VCC=600V, IC=50A, IB1=–IB2=1A — — Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (1/6module) — — — Typ. — — — — — — — — — — — — — Max. 1.0 1.0 200 3.0 3.5 1.8 — 2.5 15 3.0 0.31 1.2 0.2 Unit mA mA mA V V V — µs µs µs °C/ W °C/ W °C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50TB-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 VCE=2.8V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
80 IB=1.5A 60 IB=1.0A 40
DC CURRENT GAIN hFE
Tj=25°C
Tj=25.