MITSUBISHI TRANSISTOR MODULES
QM50TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50TB-2H
• • • • •
IC Collector c...
MITSUBISHI
TRANSISTOR MODULES
QM50TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50TB-2H
IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102±0.5 6 14 6 14 6 17 7–M4
4–φ5.5 BuP BvP EvP BvN EvN U V BwP EwP BwN EwN N N W P
BuP EuP
BvP EvP
BwPEwP
P
30 16.5
P
EuP BuN EuN
74±0.25
30
24.5
8.5
17
2 22 20 20 80±0.25 22 11 Tab#110, t=0.5
8.1 30+1.5 –0.5 29.5
LABEL
7
27
N
10
43
U
V
W
N
12
Note: All
Transistor Units are 3-Stage Darlingtons.
91±0.5
P
BuN EuN BvN EvN BwN EwN
Feb.1999
MITSUBISHI
TRANSISTOR MODULES
QM50TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 ...