QM5HG-24

MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 IC Collector current ............................ 5A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain................................. 5 Non-Insulated Type APPLICATION Base driver for High voltage transistor modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 15.6 13.6 12.6 2 1 4.5 1.5 C 9.6 5 5 20 B 2 2 E 4 0.7 20 2 1.8 4.4 B C E 0.6 2.8 1 5.45 5.45 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX VCBO VEBO IC PC IB Tj Tstg — — Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector dissipation Base current Junction temperature Storage temperature Mounting torque Weight (Tj=25°C, unless otherwise noted) Conditions VEB=2V Emitter open Collector open DC TC=25°C DC Ratings 1200 1200 7 5.0 100 2 –40~+150 –40~+125 Mounting screw M3 Typical value 0.59~0.98 6~10 5 Unit V V V A W A °C °C N·m kg·cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain (Tj=25°C, unless otherwise note...